An Investigation of Temperature Effects with On-chip Passive Components

摘要

On-chip planar spiral inductor, MIM (Metal-insulator-Metal Capacitor) and interconnect have been studied under different temperature conditions. When temperature increases from 25℃ to 85℃ degree, Q (Quality factor) of inductor decreases around 16% while there is a little temperature effect on MIM and interconnect. Results show that both the metal layer temperature effect and the substrate temperature effect contribute to the variation in Q. A wide-band, physical and scaleable inductor model with temperature effect is developed. The temperature coefficients of the inductor model have been extracted. The measurement results conform with the simulation results not only at room temperature but also at higher temperature.