Simple Synthesis Method and Bending Strength of Si_3N_4 Nanowires

摘要

Si_3N_4 nanowire and SiO_2 amorphous nanowire with diameters of 10—70 nm and 10-300 nm, respectively, have been synthesized by heating Si powders or Si/SiO_2 mixtures with or without metal catalyst at 1200℃ at ambient pressure. It is found that metal catalysts are not necessary in growth of the Si_3N_4 and SiO_2 nanowires. The Si_3N_4 nanowire is single crystal and exhibits a reversible bending phenomenon under an illumination of electron beam in a transmission electron microscope (TEM). The bending strength of Si_3N_4 nanowire is much higher than that of bulk Si_3N_4 materials.