EDGE DEFECT IMPROVEMENT OF STI-CMP THROUGH OPTMIZING OF RETAINING PRESSURE

摘要

Shallow Trench Isolation (STI) is a widely used technique in device isolation for 0.25μm technology and beyond. In this paper we discussed wafer edge Oxide erosion during STI CMP. This Oxide erosion effect will result in subsequent Oxide layer flaking after a high temperature process, e.g. during Barrier Metal deposition. We investigate how the problem can be solved at CMP STI by optimizing the Retainer Ring Pressure.