Structure of Magnetically Ordered Si:Mn

摘要

The structure studies of single crystalline silicon implanted at 340 K or 610 K with Mn~+ ions (Si:Mn) and subsequently processed under atmospheric and enhanced hydrostatic pressure at up to 1270 K are reported. The defect structure was determined by an analysis of X-ray diffuse scattering around the 004 reciprocal lattice point and by electron microscopy. High resolution X-ray diffraction techniques based on the conventional source of radiation were used for this purpose. The crystal structure of Si:Mn and the Si_(1-x)Mn_x precipitates in the implantation -disturbed layer were studied by synchrotron radiation diffraction in the grazing incidence geometry. Processing of Si:Mn results in crystallization of amorphous Si within the buried implantation - disturbed layer and in formation of Mn_4Si_7 precipitates. Structural changes are dependent both on temperature of the Si substrate at implantation and on processing parameters.