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High Brightness, Low Noise CW and GHz Repetition Rate Mode-Locked Semiconductor Disk Lasers

机译:高亮度,低噪声CW和GHz重复频率锁模半导体圆盘激光器

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Optically-pumped semiconductor disk (vertical external cavity) lasers offer marked advantages over high power edge emitters. They offer high brightness, high noise suppression, no facet damage, multiple tens of Watt CW TEM00 single frequency, narrow line emission and enormous flexibility in intra-cavity tunable SHG and DFG high efficiency sources. Optically-pumped semiconductor disk lasers (OPSLs), also referred to as vertical external-cavity semiconductor lasers (VECSELs), offer enormous flexibility in their compact cavity design, excellent TEM00 beam quality as single frequency multiple tens of Watts wavelength agile sources and high brightness raw power sources with demonstrated power exceeding 100 Watts from a single emitter. At the latter power levels, there is evidence for strong lateral ASE and lasing when the spot size exceeds 1 millimeter. The compact cavity arrangement facilitates high power intra-cavity SHG generation in the visible and UV and OPSL technology now underlies Coherent's main product line of commercial semiconductor laser sources. The high circulating intra-cavity powers have also enabled the demonstration of record high power room temperature tunable THz emission via intra-cavity DFG. High peak and average power mode-locking has been demonstrated when a saturable semiconductor absorber mirror (SESAM) is inserted in the cavity. The short cavity lengths provide for high repetition rates in the 1-10 GHz range and such sources are currently being investigated as seed sources for frequency comb generation. Current challenges lie in SESAM degradation that becomes evident when pulse durations decrease towards 100 fs and peak power densities reach the multi-kW range. The current short pulse record is 95 fs. Different SESAM growth methodologies are being investigated including ultrafast surface state recombination of a near surface grown QW, low temperature QW growth, graphene and other saturable absorber sources.
机译:与高功率边缘发射器相比,光泵浦半导体磁盘(垂直外腔)激光器具有明显的优势。它们在腔内可调谐SHG和DFG高效光源中提供高亮度,高噪声抑制,无刻面损坏,数十瓦的CW TEM00单频,窄的线发射以及极大的灵活性。光泵浦半导体磁盘激光器(OPSL),也称为垂直外腔半导体激光器(VECSEL),由于其紧凑的腔体设计,单频率多瓦数的数十波长波长敏捷光源和高亮度而提供了极大的灵活性。单个发射器的功率超过100瓦的原始电源。在后一种功率水平上,有证据表明,当光斑尺寸超过1毫米时,会产生较强的横向ASE和激光。紧凑的腔体布置有利于在可见光和UV中产生大功率腔内SHG,而OPSL技术现已成为Coherent商业半导体激光源主要产品系列的基础。高循环腔内功率还通过腔内DFG演示了创纪录的高功率室温可调THz发射。当将可饱和半导体吸收镜(SESAM)插入腔中时,已经证明了高峰值和平均功率锁模。短的腔体长度提供了1-10 GHz范围内的高重复率,目前正在研究这种源作为产生频率梳的种子源。当前的挑战在于SESAM的退化,当脉冲持续时间降低至100 fs且峰值功率密度达到数kW范围时,SESAM退化就变得很明显。当前的短脉冲记录为95 fs。正在研究不同的SESAM生长方法,包括近表面生长的QW的超快速表面态复合,低温QW的生长,石墨烯和其他可饱和吸收剂源。

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