Forming Low-Resistivity Electrodes of Thin Film Transistors with Selective Electroless Plating Process

摘要

The silver gate and source/drain electrodes for ana-Si thin film transistor were fabricated by theselective electroless plating (SELP) process. Relevantphysical properties including taper angle, uniformityand resistivity are investigated. The Ag layer wasabout 150nm to 250nm thick, the resistivity less than3x10-6 Ohm-cm and the taper angle 45 - 60 and thenonuniformity less than 10% on G2 substrates. Thetransfer characteristics with the Ag gate, andsource/drain electrodes respectively possessed goodfield effect mobility similar to conventionallyfabricated a-Si TFTs. This process provided lowresistivity, low cost and ease of processing.