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A 3D NAND Flash Ready 8-Bit Convolutional Neural Network Core Demonstrated in a Standard Logic Process

机译:在标准逻辑流程中演示的3D NAND Flash Ready 8位卷积神经网络核心

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A convolutional neural network (CNN) core that can be readily mapped to a 3D NAND flash array was demonstrated in a standard 65nm CMOS process. Logic-compatible embedded flash memory cells were used for storing multi-level synaptic weights while a bit-serial architecture enables 8 bit multiply-and-accumulate operation. A novel back-pattern tolerant program-verify scheme reduces the cell current variation to less than 0.6μA. Positive and negative weights are stored in eFlash cells in adjacent bitlines, generating a differential output signal. Our eNAND based neural network core achieves a 98.5% handwritten digit recognition accuracy which is close to the software accuracy of 99.0% for the same precision. This work represents the first physical demonstration of an embedded NAND Flash based neuromorphic chip in a standard logic process.
机译:在标准的65nm CMOS工艺中演示了可以轻松映射到3D NAND闪存阵列的卷积神经网络(CNN)内核。逻辑兼容的嵌入式闪存单元用于存储多级突触权重,而位串行架构则可实现8位乘加运算。一种新颖的反向模式容忍程序验证方案可将单元电流变化降低至小于0.6μA。正负权重存储在相邻位线的eFlash单元中,产生差分输出信号。我们基于eNAND的神经网络核心可达到98.5%的手写数字识别精度,在相同精度下接近99.0%的软件精度。这项工作代表了标准逻辑过程中基于嵌入式NAND闪存的神经形态芯片的首次物理演示。

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