Measurements of the |g|factor in a ν=1 quantum Hallliquid

摘要

We have measured the low-temperature transport properties of a front-gated twodimensional(2D) GaAs electron system. By changing the applied gate voltage Vg whilemaintaining the Landau level filling factor ν=1, and by increasing parallel magnetic fieldB|| while keeping ν=1 and Vg fixed, we can measure the |g|-factor in a 2D GaAs electronsystem in two different ways. In a perpendicular magnetic field, we find an enhancement ofthe |g| value of≈3.In contrast, the measured |g|-factor in a tilted magnetic field is close tothe bare |g|=0.44 in GaAs.