Influence of Nitrogen on the Electronic Structure ofGaInNAs/GaAs Multiquantum Wells: a PLEInvestigation

摘要

GaInNAs/GaAs multiquantum well structures have beenstudied by low-temperature photoluminescence excitation spectroscopy.We report on the nitrogen concentration dependence of the differentoptical transitions between the quantized electron and hole states ofGaInNAs/GaAs multiquantum wells. The observed data were comparedwith theoretical fitting based on the band anti-crossing model, taking thestrain effects into account. Theoretical calculations agree well withexperimental data. Due to the quantum size effect, the coupling strengthbetween the localised N states and the extended states in quantum wellsdiffers between the electron quantum states in quantum wells.