Ground state lasing in a high quality singlequantum wire

摘要

Ground state lasing with a single quantum wire in the 1-D quantumlimit is realized for the rst time, which contains only one quantum wire with onlyone 1-D quantized electronic state. The single wire is formed at a T-intersectionof a 14 nm Al0:07Ga0:93As quantum well and a 6 nm GaAs quantum well, which isembedded in the center of a single mode optical waveguide. Such a small semiconductorstructure in nano-meter scale is fabricated with atomic precision and high uniformityby the cleaved-edge overgrowthmethod with molecular beam epitaxy. We demonstratesingle-mode lasing due to the ground state of the single wire by optical pumping andits threshold pumping power is 5 mW at 5K.