Intersubband Raman lasing and importance ofinterface phonons

摘要

An intersubband laser based on CO2 laser pumped resonantRaman process is demonstrated. The 3-level system is realised in aGaAs/AlGaAs double quantum well. Surprisingly the AlAs-like phonon,which has a small overlap with the electron wavefunctions, is found tomediate the Raman process. We explain the observed behaviour byinterface phonons which extend through the double quantum well.