Resonant cavity light-emitting diodes (RCLEDs) for gassensing in the mid-infrared spectral region

摘要

We present the design and characterisation of a mid-infraredresonant cavity light-emitting diode using a GaAs/AlAs a distributedBragg reflector. The device, with an InAsSb/InAs strained layersuperlattice active region, exhibits the resonant cavity effects of spectrallypurer emission, a reduced temperature sensitivity, and an emissionenhancement at a resonant peak at λ～3.96μm.