Generation of High Power Terahertz Pulses atSemiconductor Surfaces

摘要

The physics of surface terahertz generation is investigated experimentally, andusing a Monte-Carlo simulation of carrier dynamics. It is shown that the power generated islimited by the orientation of the terahertz dipole normal to the surface. This limitation can beovercome by using a magnetic field to reorient the dipole, or a prism to reorient the surface. Inboth cases, the power obtained is increased by more than an order of magnitude.