A Lumped Equivalent Circuit Parameter Extraction Method of High Frequency Planar Schottky Diodes

摘要

A lumped equivalent circuit model of high frequency planar Schottky diodes is presented in this paper. This model includes the intrinsic part and the parasitic part that characterize Schottky junction and the geometry-dependent electromagnetic coupling of high frequency planar Schottky diodes, respectively. A parameter extraction method is proposed to obtain the values of the parasitic parameter in the equivalent circuit and the zero-based junction capacitance(C_j0). The value of C_j0 is corrected to accord with the actual value. This method provides a good way to accurately extract the value of C_j0, which can be applied to guide the design of TMMC.