Structural and optical properties of high Bi content GaSbBi films grown by molecular beam epitaxy

摘要

GaSb1-xBix thin films with 0 ≤ x ≤ 13% were grown by molecular beam epitaxy. The Bi content, lattice expansion and crystal structure were investigated by Rutherford backscattering spectroscopy, X-ray diffraction and transmission electron microscopy. Photoluminescence spectra of the GaSb1-xBix alloys with various Bi contents were studied at 77 K. The bandgap energy of GaSb1-xBix is decreased effectively as Bi content increasing. The PL peak energy of the 13% Bi content GaSb1-xBix is extended to 2.43 μm, indicating that GaSb1-xBix alloys has potentials in mid-infrared applications.