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Luminescence Efficiency of Zn-Cu-In-S / ZnS Quantum Dot films

机译:Zn-Cu-In-S / ZnS量子点薄膜的发光效率

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The aim of this work was to prepare three composite ZnCuInS/ZnS (core/shell) quantum dot (QD) flexible films and to examine their luminescent properties under X-ray excitation for potential use in medical imaging modalities. Three PMMA/ QD ZnCuInS composite films, with emission at 530 nm prepared, with concentrations 2.5, 10.0 and 15.0 %w/v. Composite films prepared by homogenously diluting dry powder QD samples in toluene and subsequently mixing with a PMMA/MMA polymer solution. The Absolute Luminescence Efficiency (AE) of the produced films was assessed using medical X-ray excitation. It found that the AE of the films is decreasing in an almost linear way, with increasing X-ray tube voltage. Also, it found that for QDs concentration up to 10.0 %w/v, the AE is increasing rapidly while after that point the relative increase of AE is rather limited. The spectral compatibility of the ZnCuInS/ZnS screen, with various existing optical detectors, was investigated after emission spectra measurements. Highest compatibility (over 90%) found for most CMOS and CCD detectors used in modern imaging modalities.
机译:这项工作的目的是准备三个复合ZnCuInS / ZnS(核/壳)量子点(QD)柔性膜,并检查它们在X射线激发下的发光特性,以用于医学成像模式。制备三层PMMA / QD ZnCuInS复合膜,其发射波长为530 nm,浓度分别为2.5、10.0和15.0%w / v。通过将干粉QD样品在甲苯中均匀稀释,然后与PMMA / MMA聚合物溶液混合制备的复合薄膜。使用医用X射线激发评估生产的薄膜的绝对发光效率(AE)。发现随着X射线管电压的增加,薄膜的AE几乎以线性方式降低。而且,发现对于浓度高达10.0%w / v的QD,AE迅速增加,而在此之后,AE的相对增加受到了相当大的限制。在发射光谱测量之后,研究了ZnCuInS / ZnS屏幕与各种现有的光学探测器的光谱兼容性。在现代成像设备中使用的大多数CMOS和CCD检测器具有最高的兼容性(超过90%)。

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