Evaluation of high-quantum-efficiency silicon photodiodes for calibration in the 400-nm to 900-nm spectral region

摘要

Abstract: Two types of light-trapping devices were utilized to determine the reflectance and internal quantum efficiency (QE) of three single-element photodiode types. Of the light-traps, the QED-200, which is composed of inversion layer photodiodes, exhibits best performance within the short wavelengths of the visible spectrum (VIS), while the A-O device, composed of p-n photodiodes, performs best in the long wave VIS up to 950 nm. The two types of light-traps combined, therefore, provide nearly 100% external QE coverage from 400 nm to 950 nm. Within this spectral range it was then possible to determine the reflectances and internal QEs for the following three photodiode types: UV100, an inversion layer photodiode; X-UV100, a shallow diffused n-p photodiode; and 10DPI/SB, a blue-enhanced p-n photodiode. For the 750 nm filter band, agreement in internal QE was found to be within 0.1% for all devices except the X-UV100. Similarly, for the 670 nm band agreement was within 0.5% for all except the X-UV100. In general the X-UV100 revealed to be unexpectedly the worst performer with lowest internal QE in all bands. The UV100 showed best performance in the short wave VIS, and with significant biasing, nearly 100% internal QE up to 750 nm. The 10DPI/SB photodiode showed most promising performance in terms of spectral coverage, with internal QE greater than 99% from 550 nm up to 900 nm with only small biasing required. The 10DPI/SB also demonstrated best performance in terms of dark current and its change with temperature, both of which were an order of magnitude smaller than for the other two photodiodes tested.!4