首页> 外文会议>Infrared Technology and Applications XXXII pt.2 >A Dynamic Resistance Nonuniformity Compensation Circuit for Uncooled Microbolometer Detector Arrays
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A Dynamic Resistance Nonuniformity Compensation Circuit for Uncooled Microbolometer Detector Arrays

机译:未冷却的微辐射热检测器阵列的动态电阻不均匀补偿电路

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This paper presents a new approach for compensating resistance nonuniformity of uncooled microbolometers by adjusting the bias currents of both detector and reference pixels. Contrary to conventional nonuniformity compensation circuits, this approach eliminates the need for digital-to-analog converters (DACs), which usually occupy a large area, dissipate high power, and require complicated external circuitry with high frequency data transfer to the microbolometer chip. The proposed circuit uses a feedback structure that dynamically changes the bias currents of the reference and detector pixels and does not need complicated external circuitry. A special feature of the circuit is that it provides continuous compensation for the detector and reference resistances due to temperature changes over time. The circuit is implemented in a 0.6μm 5V CMOS process and occupies an area of only 160μm x 630μm. Test results of the prototype circuit show that the circuit reduces the offset current due to resistance nonuniformity about 2.35% of its uncompensated value, i.e., an improvement of about 42.5 times is achieved, independent of the nonuniformity amount. The circuit achieves this compensation in 12μsec. Considering its simplicity and low cost, this approach is suitable for large array commercial infrared imaging systems.
机译:本文提出了一种通过调整检测器像素和参考像素的偏置电流来补偿未冷却的微辐射热计的电阻不均匀性的新方法。与传统的非均匀性补偿电路相反,此方法消除了对数模转换器(DAC)的需求,该转换器通常占用较大的面积,耗散高功率,并且需要复杂的外部电路,并且需要将高频数据传输到微辐射热计芯片。所提出的电路使用一种反馈结构,该结构可以动态改变参考像素和检测器像素的偏置电流,并且不需要复杂的外部电路。该电路的一个特色是,由于温度随时间的变化,它为检测器和参考电阻提供连续补偿。该电路采用0.6μm5V CMOS工艺实现,仅占160μmx630μm的面积。原型电路的测试结果表明,由于电阻不均匀性,该电路减少了失调电流,约为其未补偿值的2.35%,即,与不均匀性量无关,实现了约42.5倍的改善。电路在12μsec内实现了这种补偿。考虑到其简单性和低成本,这种方法适用于大型阵列商业红外成像系统。

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