High operation temperature mid-wavelength interband cascade infrared photodetectors grown on InAs substrate

摘要

In recent years, interband cascade detectors (ICIP) based on typer-Ⅱ superlattice have shown great performance potential at high operation temperature. In this paper, we report our studies on mid-infrared interband cascade photodetectors first grown on InAs substrate. We examined the photo-generated carriers' transport in ICIP structures by comparing three detectors grown on InAs substrate. The 2-stages ICIP device has demonstrated a high quantum efficiency around 20% at room temperature. The dark current density of the 2-stages ICIP device at -0.05V is as low as 1 nA at 80K, 1 mA at 150K, which is comparable to the state of art PIN superlatticephotodetectorswith similar cutoff wavelength. The Johnson-noise limited D* reaches 1.64×10~(14)cm.Hz~(1/2)/W at 3.65 μm and 80K, and 4.1×10~(10)cm.Hz~(1/2)/W at 3.8 μm and 200K. The 300 K background limited infrared performance (BLIP) operation temperature is estimated to be over 140 K.