Department of Computer Science and Electrical Engineering, University of Maryland Baltimore County, Baltimore, Maryland 21250 USA;
Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung, Taiwan, ROC;
Department of Electrical and Computer Engineering, University of Maryland, College Park, College Park, Maryland, 20742,USA;
Department of Electrical and Computer Engineering, University of Maryland, College Park, College Park, Maryland, 20742,USA;
Centeye, Inc., PO Box 96503 #68281, Washington DC 20090, USA;
Department of Computer Science and Electrical Engineering, University of Maryland Baltimore County, Baltimore, Maryland 21250 USA;
机译:掺杂和MOCVD条件对锌和碳掺杂InGaAs少数载流子寿命的影响及其在锌和碳掺杂InP / InGaAs异质结构双极晶体管中的应用
机译:基于SI的INP / INGAAS纳米线阵列光电探测器在电信波长下操作
机译:基于InAs / InGaAs / InAIAs / InP量子点红外光电探测器的高工作温度320 X 256中波长红外焦平面阵列成像
机译:基于MOCVD的锌扩散过程制造的IngaAs / InP PIN光电探测器阵列
机译:InGaAs / InP PIN光电探测器的材料表征
机译:InGaAs / InP核壳纳米线的自种MOCVD生长和显着增强的光致发光
机译:掺杂和MOCVD条件对锌 - 掺杂InGaAs少数型载体寿命的影响及其在锌和碳掺杂Inp / Ingaas异质结构双极晶体管的应用
机译:利用碳和锌基层掺杂剂的mOCVD材料生长和优化Inp / InGaas和Inalas / InGaas异质结双极晶体管结构