Red-shift of the photoluminescence peak of N-doped ZnO phosphors

摘要

ZnO films were fabricated using rf-magnetron sputter deposition process with different N_2 ambient. N-content in N-doped ZnO films was less than 1%. The wavelength of the highest intensity PL peak of N-doped ZnO was shifted to higher wavelength with increasing N_2 flow rate in the deposition ambient. These results indicated that the optical property of ZnO was significantly affected by the defect level created by doping with a very small amount of N.