首页> 外文会议>IMAPS 2008 - 41st international symposium on microelectronics: bringing together the entire microelectronics supply chain >Investigation of Fracture Toughness and Displacement Fields of Copper/Polymer Interface Using Image Correlation Technique
【24h】

Investigation of Fracture Toughness and Displacement Fields of Copper/Polymer Interface Using Image Correlation Technique

机译:图像相关技术研究铜/聚合物界面的断裂韧度和位移场

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

Delamination between the copper leadframe and the epoxy molding compound of microelectronic devices is a common failure concern. Interfacial adhesion characterizes the resistance of an interface to initiation and growth of interfacial delamination. In general, interface strength is an important factor for the successful fulfillment of package requirements such as structural integrity in micro- and nanoelectronic applications.rnIn conventional delamination testing methods, the critical force which leads to crack initiation or propagation together with the actual crack length are needed. Displacement fields can be used for the exact measurement of crack tip at the moment of crack onset or as it advances. A testing method which has been set up for a high resolution analysis of delamination process is further developed to investigate the displacement fields at the crack tip of polymer/metal interface. Bilayer metal/polymer specimens were employed to measure the adhesion strength in terms of interfacial fracture toughness using Four-Point Bending (4PB) and End Notched Flexure (ENF) delamination tests. During the bending tests, high resolution images of the crack tip area were taken at different loading stages. These images were analyzed later using the microDAC technique (i.e., micro deformation analysis by image correlation). The microDAC approach is based on the application of digital cross correlation on grey scale submatrices of the analyzed images. The result is a full-field displacement description of the analyzed surface. This allows for the in-situ measurement of the crack length during the delamination test. In addition, the effects of mode angle and elevated temperatures on the interfacial fracture toughness were investigated in this work.
机译:铜引线框架和微电子器件的环氧模塑化合物之间的分层是常见的故障问题。界面粘附性表征了界面对界面分层的引发和生长的抵抗力。通常,界面强度是成功满足封装要求(例如在微电子和纳米电子应用中的结构完整性)的重要因素。在常规分层测试方法中,导致裂纹萌生或扩展的临界力与实际裂纹长度是需要。位移场可用于在裂纹发生时或裂纹发展时精确测量裂纹尖端。进一步建立了一种用于分层过程高分辨率分析的测试方法,以研究聚合物/金属界面裂纹尖端的位移场。使用四点弯曲(4PB)和末端缺口挠曲(ENF)分层测试,使用双层金属/聚合物样品测量界面断裂韧性方面的粘合强度。在弯曲测试期间,在不同的加载阶段拍摄了裂纹尖端区域的高分辨率图像。稍后使用microDAC技术分析这些图像(即通过图像相关性进行微形变分析)。 microDAC方法基于对分析图像的灰度子矩阵进行数字互相关的应用。结果是分析表面的全场位移描述。这允许在分层测试期间就地测量裂纹长度。另外,研究了模态角和高温对界面断裂韧性的影响。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号