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Indium doped titanium dioxide: A high mobility and low K- nanostructured semiconductor

机译:铟掺杂二氧化钛:高迁移率和低K-纳米结构的半导体

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Compositional analysis done on the synthesized undoped and indium doped titanium dioxide nanoparticles by XRD, EDAX, UV-vis spectroscopy, SEM, parallel plate method. The UV spectograph reveals that the energy band gap is reduced and the wavelength spectrum is shifted towards red from blue region with respect to TiO.The electrical properties indicate that the conductivity is around 10-5 mho/cm and mobility is significantly higher than that of un doped TiO and K Value is low. The SEM result reveals that the particles are spherical in nature and coagulated. The decreased energy band gap makes it suitable for semiconducting purpose and is found suitable for application in optoelectronics devices like solar cell, phototransistors etc.
机译:通过XRD,EDAX,UV-可见光谱,SEM,平行板法对合成的无掺杂和铟掺杂的二氧化钛纳米粒子进行成分分析。紫外光谱表明,相对于TiO,其能带隙减小,波长光谱从蓝色区域向红色移动。电学性质表明电导率约为10-5 mho / cm,迁移率明显高于TiO2。未掺杂的TiO和K值低。 SEM结果表明该颗粒本质上是球形的并凝结。减小的能带隙使其适合于半导体用途,并且发现其适用于光电子器件,例如太阳能电池,光电晶体管等。

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