Low temperature solution process for random high aspect ratio silver nanowire as promising transparent conductive layer

摘要

Indium Tin Oxide (ITO) is traditionally deposited at elevated temperatures to achieve the low resistivity needed for device applications. This work aims to replace (ITO) as transparent conductive (TC) film with high aspect ratio (length to diameter) silver nanowire (AgNW) in purpose of employing at heat-sensitive optoelectronic devices. Fused-joints of AgNW network required for good conductivity is normally achieved using high temperature annealing that can either damage heat-sensitive devices or cause difficulty in the fabrication process. Employing a low temperature post-treatment in deposition of high aspect ratio AgNWs showed a comparatively conductive AgNWs network with ITO. Conductive atomic force microscopic (C-AFM) and Four-point probe confirmed conductivity of the network for application as front electrode in heat-sensitive thin film solar cells. This cost-effective and solution-based process could be promising for third generation solar cells like Perovskite.