Large-area n-type TOPCon Cells with Screen-printed Contact on Selective Boron Emitter Formed by Wet Chemical Etch-back

摘要

and sheet resistance increased to 65 and 120 Ω/□ in the p++ and p+ regions, respectively. A solar cell with screen-printed Al/Ag contact on the etched-back selective emitter (65/120 Ω/□) on the front and TOPCon on the back achieved a Voc of 681.9 mV and efficiency of 21.13% on large-area n-type Cz Si wafer, demonstrating the potential of this technology for high-efficiency industrial solar cells.