Photocurrent enhancement in ultrathin silicon by the photonic band-edge effect

摘要

Improving the photon to electron conversion efficiency of photodetecting devices including photo sensors and solar cells having an ultrathin-film photoelectric-conversion layer (PECL) is important for several reasons: enhanced carrier extraction, reduced material usage and simplified fabrication processing. In order to achieve this target, an effective method to trap and ultimately absorb photons within the ultrathin PECL is necessary. Over the years, various methods to precisely manipulate the properties of photons have been demonstrated with photonic crystals