Phototransistor based Time-of-Flight range finding sensor in an 180 nm CMOS process

摘要

Time-of-Flight (TOF) sensors using different kinds of integrated phototransistors as photodetectors are presented in this work. The sensors as well as the phototransistors are implemented in a standard 180 nm CMOS process. A fill factor of 67 % is reached. At optimal working points of the phototransistors standard deviations better than 2.6 mm are achieved.