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Electric characteristics of high-current self-magnetic pinch diode of pulsed electron accelerator “Gamma-1”

机译:脉冲电子加速器“ Gamma-1”的大电流自磁收缩二极管的电气特性

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RFNC-VNIIEF is developing a four module electrophysical facility “Gamma-4” (2 MV, 3 MA, 60 ns), meant for generation of powerful bremsstrahlung radiation pulses (BR). One of the basic modes of the facility operation is a mode of each module operation with its autonomous vacuum diode. The present work is concerned with electric characteristics of a self-magnetic-pinch (SMP) diode of the typical module of “Gamma-4” facility - pulsed electron accelerator “Gamma-1”. In all there were performed 20 shots of “Gamma-1” accelerator at 0.9 MV charging voltage of its forming system lines. In the experiments the SMP diode with a hollow cathode with 168 mm output diameter was used. The diode impedance was adjusted by changing the accelerating gap between a cathode and a target within the range of 4 up to 14 mm. It is shown, that when changing the diode impedance within the limits from 1.3 up to 4.0 Ohm on the typical module of “Gamma-4” facility there can be implemented operation modes of BR pulse formation with boundary quantum energy 0.9 up to 2.0 MeV.
机译:RFNC-VNIIEF正在开发一种四模块电物理设备“ Gamma-4”(2 MV,3 MA,60 ns),旨在产生强大的致辐射脉冲(BR)。设施操作的基本模式之一是带有自主真空二极管的每个模块操作的模式。本工作涉及“ Gamma-4”设备典型模块的自磁夹(SMP)二极管的电气特性-脉冲电子加速器“ Gamma-1”。在其成型系统线的0.9 MV充电电压下,总共进行了20次“ Gamma-1”加速器的拍摄。在实验中,使用了具有168 mm输出直径的空心阴极的SMP二极管。通过在4至14 mm的范围内改变阴极和靶之间的加速间隙来调节二极管阻抗。结果表明,当在“ Gamma-4”设备的典型模块上将二极管阻抗在1.3到4.0欧姆的范围内变化时,可以实现BR脉冲形成的工作模式,边界量子能0.9到2.0 MeV。

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