High power mmW switch technologies

摘要

All high frequency radio and radar applications require electronically controlled functional operation in the form of high performance switches. This control functionality often must satisfy a number of requirements, such as, linearity, high isolation, low distortion, minimal signal loss, high third order intercept, switching speed, and power handling; in addition to simply being able to switch RF signals from one electrical path to another. This paper compares the performance of recent advances in AlGaAs/GaAs PIN diode integrated switches to the capabilities of more traditional silicon and HMIC PIN diode, GaAs pHEMT, and SOI CMOS switch configurations This comparison is also extended to include two new alternate GaN HEMT technologies.