Strain Effect on Electronic Properties of Arsenene/Graphene Heterostructure

摘要

Using density functional theory calculations with van der Waals (vdW) corrections, we investigate the strain effect on electronic properties of arsenene/graphene bilayer heterostructure. It is demonstrated that the transitions from n-type doping to p-type doping of arsenene occurs when the biaxial strain is applied from -10% to 10%, which origins from the vdW interactions between arsenene and graphene. Moreover, the strain can also induce tunable bandgap of arsenene from 0.41 eV to 1.80 eV.