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Electrical characterization of a pressed contact between a power chip and a metal electrode

机译:功率芯片和金属电极之间压接的电气特性

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This study deals with the power electronics packaging and the needs for additional knowledge about electrical pressed contact behavior. For this, a measure bench has been realized. It is able to characterize the pressed interface between a metal electrode and a power chip as a function of the clamping force (0-8000N) and the temperature (up to 100degC). First measurement results show that the electrical contact resistance is negligible compared to the chip on-state voltage. Second measurement results show that the high value of the chip metallization resistance masks also the contact resistance. Finally, it appears that it is necessary to estimate the chip contact zone influences on the current repartition. Then a method based on both, the use of a chip model and the measurements directly on the chip, has been developed. It is able to look for the steady state current repartition in the chip as a function of the contact zone and the chip metallization physical parameters.
机译:这项研究涉及电力电子封装以及对电气压接行为的其他知识的需求。为此,已经实现了一个测量台。它能够根据夹紧力(0-8000N)和温度(最高100℃)来表征金属电极和功率芯片之间的受压界面。首次测量结果表明,与芯片导通电压相比,电接触电阻可忽略不计。第二次测量结果表明,芯片金属化电阻的高值也掩盖了接触电阻。最后,看来有必要估计芯片接触区对当前分区的影响。然后,开发了一种基于芯片模型的使用和直接在芯片上进行测量的方法。能够根据接触区和芯片金属化物理参数来寻找芯片中的稳态电流重新分配。

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