3-ZnO and gold modified WO Comparative Study of Unmodified WO<inf>3</inf>-ZnO and Au-Modified WO<inf>3</inf>-ZnO Based Thin Film Sensor Fabrication for Enhanced CH<inf>4</inf> Gas Sensing Performance
首页> 外文会议>2018 IEEE Electron Devices Kolkata Conference >Comparative Study of Unmodified WO3-ZnO and Au-Modified WO3-ZnO Based Thin Film Sensor Fabrication for Enhanced CH4 Gas Sensing Performance
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Comparative Study of Unmodified WO3-ZnO and Au-Modified WO3-ZnO Based Thin Film Sensor Fabrication for Enhanced CH4 Gas Sensing Performance

机译:未修饰的WO 3 -ZnO与Au修饰的WO 3 -ZnO基薄膜传感器制造用于增强CH 4 气敏性能的对比研究

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摘要

WO3-ZnO and gold modified WO3-ZnO based thin film sensors were successfully fabricated and prepared by sol-gel process at room temperature. The prepared and deposited film was characterized by field emission scanning electron microscopy(FESEM), X-ray diffraction (XRD)and TEM (transmission electron microscopy). The gas sensing properties of Au modified WO3-ZnO thin film showed that deposited metal oxides have greatly influenced on enhanced response towards CH4 gases. The response magnitude was determined by various methane gas concentration and different operating temperature ranges of 50°C-350°C. It was establish that at the operating temperature of 150°C, gold- modified WO3-ZnO thin film sensor has the highest response (65%)as compared to WO3-ZnO samples.
机译:WO \ n 3 \ n-ZnO和金修饰的WO \ n 3\n-ZnO基薄膜传感器是在室温下通过溶胶-凝胶工艺成功制备和制备的。通过场发射扫描电子显微镜(FESEM),X射线衍射(XRD)和TEM(透射电子显微镜)对制备和沉积的膜进行表征。 Au修饰的WO \ n 3 \ n-ZnO薄膜表明,沉积的金属氧化物极大地影响了对CH4气体的响应。响应幅度取决于各种甲烷气体浓度和50°C-350°C的不同工作温度范围。已经确定,在150°C的工作温度下,金改性的WO \ n 3\n-ZnO薄膜传感器与WO \ n 3 \ n-ZnO样本。

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