Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China;
Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China;
Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China;
Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China;
Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China;
high beam quality; passively Q-switched; mico laser;
机译:Yb:YAG / Cr〜(4 +):YAG复合晶体的无源调Q微芯片激光器
机译:Yb:YAG / Cr〜(4 +):YAG复合陶瓷被动调Q微芯片激光器的优化
机译:短脉冲Nd:YAG / Cr〜(4 +):YAG被动调Q微芯片激光器的饱和吸收体的泵浦诱导漂白
机译:外延生长的被动调Q Cr / sup 4 + / :: GGG / Nd / sup 3 + /:GGG,Cr / sup 4 + /:YAG / Yb / sup 3 + /:YAG和Cr / sup的光学和激光特性4 + /:YAG / Nd / sup 3 + /:YAG微芯片激光器
机译:开发了用于卫星激光测距2000项目的被动调Q开关Nd:YAG微芯片激光器。
机译:调Q Nd-YAG眼科激光器上的光束障碍危险:Nanolas激光器的安全装置。
机译:被动Q开关激光操作的圆形,通过直接FS激光束写入Nd:YAG / Cr ^ 4 +:YAG复合介质实现了掩埋凹陷 - 包层的波导。