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Temperature dependent spectroscopic characterization of Tm:YAG crystals as potential laser medium for pulsed high energy laser amplifiers

机译:Tm:YAG晶体作为脉冲高能激光放大器的潜在激光介质的温度依赖性光谱表征

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摘要

Similar to ytterbium doped laser materials laser operation with thulium doped media is possible within a quasi-three level scheme, which especially for pulse pumped lasers is a drawback for efficient laser operation, as a significant amount of energy is required to bleach out the laser medium. Since this energy cannot be extracted, it is lost for the amplification process. Hence, operation of such lasers at cryogenic temperatures seems to be an appropriate solution. For further modeling and derivation of design rules for future laser systems based on such a scheme reliable spectral data is needed. We will present absorption and emission measurements on Tm:YAG as a function of temperature in the range from 80 K to 300 K covering both the absorption bands around 800 nm and the emission bands up to 2.1 urn. The spectral measurements were carried out on two samples of Tm:YAG with doping levels of 2 at.% and 8 at.%. Precautions for reabsorption effects were taken to allow for accurate results over the whole measurement range. From these measurements we have derived absorption and emission cross sections and radiative lifetimes. By comparing the latter values to values obtained by highly accurate measurements of the lifetime using the pinhole method we could also estimate the quantum efficiency.
机译:与掺laser激光材料相似,可以在准三能级方案下使用掺do介质进行激光操作,尤其是对于脉冲泵浦激光器,这是有效激光操作的一个缺点,因为需要大量能量才能使激光介质漂白。由于无法提取此能量,因此会在放大过程中丢失。因此,在低温下操作此类激光器似乎是一种合适的解决方案。为了基于这种方案对未来的激光系统进行进一步的建模和设计规则的推导,需要可靠的光谱数据。我们将介绍Tm:YAG在80 K至300 K范围内随温度变化的吸收和发射测量,涵盖800 nm左右的吸收带和高达2.1 urn的发射带。光谱测量是在两个Tm:YAG样品中进行的,掺杂水平分别为2 at。%和8 at。%。注意重吸收效果,以在整个测量范围内获得准确的结果。通过这些测量,我们得出了吸收截面和发射截面以及辐射寿命。通过将后者的值与通过使用针孔法高度精确地测量寿命而获得的值进行比较,我们还可以估算出量子效率。

著录项

  • 来源
  • 会议地点 Prague(CZ)
  • 作者单位

    Institute of Optics and Quantum Electronics, Friedrich-Schiller University, Max-Wien Platz 1, 07743 Jena, Germany,HiLASE, Fyzikalni ustav AV CR, v. v. i., Za Radnici 828, 252 41 Dolni Brezany, Czech Republic;

    Institute of Optics and Quantum Electronics, Friedrich-Schiller University, Max-Wien Platz 1, 07743 Jena, Germany,Helmholtz-Institute Jena, Frobelstieg 3, 07743 Jena, Germany;

    Institute of Optics and Quantum Electronics, Friedrich-Schiller University, Max-Wien Platz 1, 07743 Jena, Germany;

    Institute of Optics and Quantum Electronics, Friedrich-Schiller University, Max-Wien Platz 1, 07743 Jena, Germany,Helmholtz-Institute Jena, Frobelstieg 3, 07743 Jena, Germany;

    HiLASE, Fyzikalni ustav AV CR, v. v. i., Za Radnici 828, 252 41 Dolni Brezany, Czech Republic;

    HiLASE, Fyzikalni ustav AV CR, v. v. i., Za Radnici 828, 252 41 Dolni Brezany, Czech Republic;

    HiLASE, Fyzikalni ustav AV CR, v. v. i., Za Radnici 828, 252 41 Dolni Brezany, Czech Republic;

    Institute of Optics and Quantum Electronics, Friedrich-Schiller University, Max-Wien Platz 1, 07743 Jena, Germany,Helmholtz-Institute Jena, Frobelstieg 3, 07743 Jena, Germany;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    laser materials; thulium; diode pumped; cryogenic; cross sections; spectroscopy;

    机译:激光材料铥;二极管抽运;低温交叉区域;光谱学;

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