首页> 外文会议>High-power, high-energy, and high-intensity laser technology II >Wavelength-tunable Erbium-doped fiber laser using silicon-on-insulator (SOI) based micro-ring with narrow laser linewidth
【24h】

Wavelength-tunable Erbium-doped fiber laser using silicon-on-insulator (SOI) based micro-ring with narrow laser linewidth

机译:使用基于绝缘体上硅(SOI)的微环的波长可调掺-光纤激光器,激光器的线宽较窄

获取原文
获取原文并翻译 | 示例

摘要

We propose and demonstrate a wavelength-tunable and narrow-linewidth erbium-doped fiber (EDF) laser using silicon-on-insulator (SOI) based micro-ring. We discuss the wavelength selection and wavelength-tunable operation of the proposed fiber laser. The SOI based micro-ring is fabricated on a SOI wafer with a 0.22 um thick top silicon layer and a 2 um thick burial oxide (BOX) layer, In order to enhance the coupling efficiency between the SOI based micro-ring and the EDF, a pair of uniform period grating couplers are used, In the experiment, the lasing wavelengths can be tuned in the wavelengths range from 1532 nm to 1567.2 nm with a tuning step of 2 nm. The wavelength range and the tuning step are determined by the EDFA gain-bandwidth and the FSR of the SOI based micro-ring respectively. The OSNR of each lasing wavelength is > 42 dB. By using a double-ring configuration, a narrow laser linewidth of 50 kHz can be achieved.
机译:我们提出并演示了使用基于绝缘体上硅(SOI)的微环的波长可调和窄线宽掺fiber光纤(EDF)激光器。我们讨论了所提出的光纤激光器的波长选择和波长可调操作。基于SOI的微环是在具有0.22 um厚的顶部硅层和2 um厚的掩埋氧化物(BOX)层的SOI晶圆上制造的,为了提高基于SOI的微环与EDF之间的耦合效率,使用一对均匀周期光栅耦合器。在实验中,可以以2 nm的调整步长在1532 nm至1567.2 nm的波长范围内调整激光波长。波长范围和调谐步骤分别由基于SOI的微环的EDFA增益带宽和FSR决定。每个激光波长的OSNR为> 42 dB。通过使用双环配置,可以实现50 kHz的窄激光线宽。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号