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New thermistor material for thermistor bolometer: material preparation and characterization

机译:用于热敏电阻辐射热计的新型热敏电阻材料:材料的制备和表征

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Abstract: Structural, electrical, and infrared optical properties of screen-printed vanadium oxide thick films have been studied. It is seen that the original starting material, in the form of V$-2$/O$-3$/, undergoes a global transformation to its next higher oxide V$-2$/O$-5$/ during firing. This has been confirmed through differential thermal analysis (DTA) and x-ray diffraction analysis. The crystalline morphology of the transformed V$-2$/O$- 5$/ seems to improve as a function of firing temperature in the range of 400- 600$DGR@C. The associated screen-printed resistors have temperature coefficient of resistance in the range of $MIN@37,000 to $MIN@17,000 ppm per K over a temperature range of $MIN@65 to $PLU@155$DGR@C and thermistor constant equal to 2000 K, which are independent of firing temperature. It is observed that both electrical resistivity and infrared emissivity decreases with increase of firing temperature, attaining values 1.12 $MUL 10$+2$/ ohm cm for electrical resistivity and 82% for infrared emissivity at a firing temperature of 550$DGR@C.!
机译:摘要:研究了丝网印刷氧化钒厚膜的结构,电学和红外光学性能。可以看出,在烧制过程中,以V $ -2 $ / O $ -3 $ /的形式存在的原始原材料经历了全球转型,转变为下一个更高的氧化物V $ -2 $ / O $ -5 $ /。这已通过差热分析(​​DTA)和X射线衍射分析得到了证实。转化的V $ -2 $ / O $ -5 $ /的晶体形态似乎随着焙烧温度在400-600 $ DGR @ C范围内的变化而改善。相关的丝网印刷电阻器的电阻温度系数在$ MIN @ 65至$ PLU @ 155 $ DGR @ C的温度范围内,每K的电阻温度系数为$ MIN @ 37,000至$ MIN @ 17,000 ppm,并且热敏电阻常数等于2000 K,与烧成温度无关。可以看出,随着烧成温度的升高,电阻率和红外发射率均降低,在550℃DGR @ C的烧成温度下,电阻率达到1.12MUL 10 $ + 2 $ / ohm cm,红外发射率达到82%。 !

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