Electrodeposited Cu-In-Ga-Se Precursor Layers

摘要

Cu-In-Se (CIS) and Cu-In-Ga-Se (C1GS) thin films have been prepared by the electrodeposition technique on molybdenum-coated glass substrates. In this process, electrodeposited precursor films are prepared at varying deposition bath temperatures, deposition currents, electrolyte concentrations, and deposition times. The films are annealed at about 550℃ in Se for 15 minutes and also by rapid thermal processing in flowing argon gas. The as-deposited and annealed films are characterized by inductively coupled plasma spectrometry and x-ray diffraction analysis.