Non-Destructive, Large-Scale Imaging of Anti-Phase Disorder in GaP Epilayers on Si(001) Using Low-Energy Electron Microscopy

摘要

We introduce low-energy electron microcopy (LEEM) as a surface-sensitive technique for the investigation of anti-phase disorder and other defects in Ⅲ-Ⅴ semiconductor layers on Si(100) and present first results for 40 nm GaP films on Si(100). Using an actively pumped ultra-high vacuum transfer chamber, we were able to preserve the surface structure and chemical composition of the MOVPE-grown GaP films on Si(100) during transfer from the MOVPE reaction chamber to the remote electron microscope. Applying dark- and bright-field imaging modes we demonstrate the unique potential of LEEM for non-invasive, fast and large-scale inspection of anti-phase disorder and surface defects in heteroepitaxial Ⅲ-Ⅴ systems on Si.