首页> 外文会议>Graphene, Ge/III-V, and emerging materials for post-CMOS application 5 >Novel Cross-Linked Ortho-Carborane and Ortho-Carborane:Y (Y=1,4-diaminobenzene, pyridine, benzene) Polymer Films: A New Class of Carborane-Based Materials with Tunable Electronic Structure
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Novel Cross-Linked Ortho-Carborane and Ortho-Carborane:Y (Y=1,4-diaminobenzene, pyridine, benzene) Polymer Films: A New Class of Carborane-Based Materials with Tunable Electronic Structure

机译:新型交联的邻甲硼烷和邻甲硼烷:Y(Y = 1,4-二氨基苯,吡啶,苯)聚合物薄膜:具有可调电子结构的新型基于甲硼烷的材料

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摘要

A new class of semi-conducting boron carbide polymers has been formed from cross-linking of ortho-carborane (o-B_(10_C_2H_(12)) or o-B_(10)C_2H_(12) in the presence of aromatic compounds (Y =1,4-diaminobenzene, pyridine, and benzene) to form B_(10)C_2H_X and B_(10)C_2H_X:Y, respectively. Core and valence band photoemission and molecular orbital calculations indicate that cross-linking of o-B_(10)C_2H_(12) results in site-specific bonding between boron sites opposite carbon sites on the carborane icosahedra. This site specificity is retained when cross-linking o-B_(10)C_2H_(12) in the presence of aromatic linking units; the linking units insert themselves between carborane icosahedra. This insertion results in bonding between boron sites opposite carbon sites in the carborane icosahedra to carbon sites on the aromatic moieties. B_(10)C_2H_X:Y films exhibit shifts in the valence band maximum from -4.3 eV (i.e. 4.3 eV below the Fermi level) for B_(10)C_2Hx, to -2.6 eV, -2.2 eV and -1.7 eV for Y = benzene, pyridine, or 1,4-diaminobenzene, respectively. States near the top of valence band correspond to states localized on the linking unit. Films formed by plasma-enhanced chemical vapor deposition of o-B_(10)C_2H_(12) are p-doped, and such films show excellent rectifying characteristics when deposited on n-type Si-extremely promising for neutron detection and other device applications.
机译:在芳族化合物存在的情况下,邻碳硼烷(o-B_(10_C_2H_(12))或o-B_(10)C_2H_(12)的交联形成了新型的半导电碳化硼聚合物。 = 1,4-二氨基苯,吡啶和苯)分别形成B_(10)C_2H_X和B_(10)C_2H_X:Y。核心和价带光发射以及分子轨道计算表明o-B_(10 )C_2H_(12)导致碳硼烷二十面体上碳原子对位的硼位点之间发生位点特异性键合。当存在芳族连接单元时,将o-B_(10)C_2H_(12)交联时,这种位点特异性得以保留;连接单元将自身插入到碳硼烷二十面体之间,这种插入导致在碳硼烷二十面体中与碳原子相对的硼位之间键合到芳族部分的碳位上B_(10)C_2H_X:Y薄膜的价带最大偏移为-4.3 eV (即,费米能级以下4.3 eV)对于B_(10)C_2Hx,分别为-2.6 eV,-2.2 eV和-1.7 eV Y分别为苯,吡啶或1,4-二氨基苯。价带顶部附近的状态对应于链接单元上的本地状态。通过o-B_(10)C_2H_(12)的等离子体增强化学气相沉积形成的膜是p掺杂的,当沉积在n型Si上时,此类膜表现出出色的整流特性,这对于中子检测和其他设备应用来说是极有希望的。

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    Department of Chemistry and Center for Electronic Materials Processing and Integration, 1155 Union Circle #305070, University of North Texas, Denton, TX 76203, USA;

    Department of Chemistry and Center for Electronic Materials Processing and Integration, 1155 Union Circle #305070, University of North Texas, Denton, TX 76203, USA;

    Department of Chemistry and Center for Electronic Materials Processing and Integration, 1155 Union Circle #305070, University of North Texas, Denton, TX 76203, USA;

    Department of Physics and Astronomy, Nebraska Center for Nanostructures and Materials, 855 North 16th Street, Theodore Jorgensen Hall, University of Nebraska-Lincoln, Lincoln, NE 68588-0299, USA;

    Department of Physics and Astronomy, Nebraska Center for Nanostructures and Materials, 855 North 16th Street, Theodore Jorgensen Hall, University of Nebraska-Lincoln, Lincoln, NE 68588-0299, USA;

    Department of Chemistry and Center for Electronic Materials Processing and Integration, 1155 Union Circle #305070, University of North Texas, Denton, TX 76203, USA;

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  • 入库时间 2022-08-26 14:05:46

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