The practical application limits of very high power GTOs and veryhigh power bipolar transistors

摘要

An overview is given of the practical application limitations ofnvery high power GTOs up to 2500 A I_TCM and 4500 V V_DRMn and very high power bipolar transistors up to 2000 A I_C(CON)n and 1200 V V_CEX. Some general comments are made aboutnthe limitations of medium power GTOs, transistors, Darlingtons and thencombined MOS gated charge modulated devices (e.g. insulated gatentransistors-IGTs). The latest ideas on extending the performancenenvelope of very high power GTOs and very high power bipolar transistorsnare also indicated. Because of the power loss dissipated in thesendevices which is often of the order of 1 to 2 kW when controlling highnpower at high switching frequencies it is necessary to use compressionnbonded double side cooled capsules or press packs for these devices. Notnonly forced air cooling, but also phase change (freon) and oil coolingnmay have to be employed to cope with this level of dissipation