1.9-GHz single balanced diode mixer fabricated on Al2O3 substrate by thin film technology

摘要

Abstract: A passive balun using spiral inductors and inter-digital capacitors has been developed for a 1.9 GHz balanced diode mixer on Al$-2$/O$-3$/ substrates. Using this passive balun on the input port (RF port and LO port) of mixer circuit and incorporating the Schottky diode, where I-V model and small signal RF model have been established, a wideband signal balanced diode mixer was designed, fabricated and measured.!5