Enhancement of external quantum efficiency in GaN based LEDs

摘要

We present a review of the recent developments to enhance the external quantum efficiency (EQE) in GaN based vertical light-emitting diodes (V-LEDs). The combined use of quasi-photonic crystal and photochemical etching significantly improved the light extraction efficiency (LEE) of V-LEDs by a factor of 5. The enhancement of light output power by the nanotexturing of n-face n-GaN was remarkably influenced by reflectance of the p-contact. The enhanced LEE was also demonstrated by depositing a spontaneously formed MgO nano-pyramids and ZnO refractive-index modulation layer on the surface of V-LEDs, resulting in the increase of output power by 49 %, comparing with the V-LEDs with a flat n-GaN surface. The thermal stability of Ag-based p-type ohmic contact was siginficantly enhanced by addition of Cu, In, and Mg atoms to Ag layer, leading to high light reflectance and low contact resisitivity. Finally, we present a method of increasing light output power and suppressing efficiency droop in V-LEDs without modifying the epitaxial layers. These improvements are achieved by reducing the quantum-confined Stark effect by reducing piezoelectric polarization that results from compressive stress in GaN epilayer. This compressive stress is relaxed due to the external stress induced by an electro-plated Ni metal substrate.