Band structure calculation of strained graphene on hexagonal boron nitride

摘要

The band structure of the graphene on hexagonal boron nitride system are calculated with the ab-initio method, and the dependence on the stress applied to the direction perpendicular to the sheet are investigated. It is shown that there exists an optimal stress condition for widening the band gap of the graphene, which could greatly improve the transistor on/off ratio, while sacrificing the good on-current performance.