Hydrogen effect on characteristics of the resistive switching memory

机译：氢对电阻开关存储器特性的影响

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Hydrogen anneal effects on reproducibility of the switching voltages for a resistive switching memory using anodic porous alumina have been investigated. The hydrogen anneal made the reproducibility worse.

机译：已经研究了氢退火对使用阳极多孔氧化铝的电阻式开关存储器的开关电压的可再现性的影响。氢退火使可再现性变差。

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来源
《Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for》|2012年|p.1- 2|共2页
会议地点 Osaka(JP)
作者
Otsuka Shintaro; Shimizu Tomohiro; Shingubara Shoso; Kurumi Satoshi; Suzuki Kaoru; Iwata Nobuyuki; Watanabe Tadataka; Takano Yoshiki; Takase Kouichi;
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作者单位

College of Science and Technology, Nihon University, Chiyoda-ku Tokyo 101-8308, Japan;

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原文格式 PDF
正文语种 eng
中图分类电子元件、组件;
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Hydrogen effect on characteristics of the resistive switching memory

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