Stopping Power and Range of Cesium-137 Gamma Rays in Gallium Arsenide Field Effect Transistor (GaAsFET)

摘要

In this paper, the defect generated in the interaction of gamma ray resulting from cesium ion (Cs-137) and GaAs as a main portion of gallium arsenide field effect transistor (GaAsFET) is simulated using SRIM (Stopping and Range of Ions in Matter). The induced defects are in the form of vacancies, defect clusters and dislocations. Besides, the defect is found influencing the kinetic processes that occur both inside and outside the cascade volume. The radiation tolerance between the conventional scale and nanoscale thickness of GaAs layer is also being compared. From the findings, it is observed that when the thickness of GaAs layer is scaled down, defect that induced by the energy deposition of gamma radiation is significantly lesser. This means that nanoscale GaAs layer features improved radiation robustness towards the deposition of energetic ions.