Microscopic description of molecular devices

摘要

Semiconductor materials are nowadays the paradigm in electronic and optoelectronic devices and their developments have contributed to fundamental progresses in condensed matter physics. However, the information industry roadmap is constantly pushing down device dimensions for denser integrated circuits which result in more and more powerful computers, with the additional benefit of lighter and less power-consuming microchips. Nowadays, the state of the art of Si-MOSFET gate channels, which are at the basis of current digital computers, has reached 50 nm in length. However, prototype FETs can reach gate lengths as short as 5nm . This is largely due to the advancement in growth and lithographic techniques which has allowed routine fabrication of sub-micron features in artificially tailored semiconductor heterostructures.