AlGaInN laser diode technology for free-space and plastic optical fibre telecom applications

摘要

Gallium Nitride laser diodes fabricated from the AlGalnN material system is an emerging technology for laser sources from the u.v. to visible and is a potential key enabler for new system applications such as free-space (underwater & air bourne links) and plastic optical fibre telecommunications. We measure visible light (free-space and underwater) communications at high frequency (up to 2.5 Gbit/s) and in plastic optical fibre (POF) using a directly modulated GaN laser diode.