The Lattice Strain of O_2~+ Implanted Si

摘要

The lattice strain distributin in O_2~+ implanted Si at an energy 120 kev, different doses (1X10~12 approx 1X10~16 ion/cm~2) and annealing temperatures (400 deg C approx 900 deg C) have been investigated by means of X-ray diffraction in the paper. The 22 diffraction curves of implanted thermal annealed Si were analyzed. On a basis of trial and error strain function and multilayer model, according to kinematical theory of XRD, with levenberg-Marquardt optimization method to simulate experiment curves, we have got the lattice strain distribution as the functions of depth.