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Exchange effects in electron-hole plasma in quantum well heterostructures under an electric field

机译:电场下量子阱异质结构中电子空穴等离子体中的交换效应

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Abstract: Numerical calculations are presented for the electron-hole plasma density dependence of the ground-state subband energies and carrier's wave functions in GaAs/Al$-x$/Ga$- 1$MIN@x$/As quantum-well heterostructure subjected an electric field. We show that both the Hartree and exchange interactions cause the electron and hole self-energies to highly depend on the plasma density. In contrast, only a weak dependence of the spatial extent of the wave functions, due to exchange interactions, on the plasma density has been found.Our calculations also reveal a strong competition between the exchange and Hartree interactions as a function of plasma density, that in general, depends on the electric field and quantum-well width. The results of numerical calculations of the band-gap renormalization due to many- body effects are used to infer the bistable behavior of the quantum-well heterostructures in an electric field under near band-gap photoexcitation. !9
机译:摘要:给出了GaAs / Al $ -x $ / Ga $ -1 $ MIN @ x $ / As量子阱异质结构中基态子带能量与载流子波函数的电子空穴等离子体密度依赖性的数值计算方法电场。我们表明,Hartree和交换相互作用都导致电子和空穴的自能量高度依赖于等离子体密度。相比之下,由于交换相互作用,仅发现了波函数空间范围对等离子体密度的弱依赖关系。我们的计算还表明,交换和Hartree相互作用之间的竞争是血浆密度的函数,即通常,取决于电场和量子阱宽度。由于多体效应引起的带隙重归一化的数值计算结果被用于推断在带隙光激发下电场中量子阱异质结构的双稳态行为。 !9

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