Al-RE-TM(RE=Rare-Earth metals, TM=transition metals) ternary alloy films for TFT-LCD electrodes

摘要

The effects of adding a third transition metal element, Co, Cu, Zr, or Ta, to Al-Nd (or Gd) alloy thin films were studied in order to investigate the changes in the film's microstructure and resistivity, and also their tendency to form hillocks or whiskers at high temperatures. The addition of Zr (or Ta), which has repusive interactions with both Nd and Gd, to the Al-RE binary alloy films causes an increasg metal interlayers for active matrix display applicationsSambit K.Saha; Robert S.Howell; Miltiadis K.Hatalisp.333-338The effects of using an extra layer of nickel, cobalt or titanium with Al-1Cu films were examined with regard to hillock formation. The density and sizes of hillocks in these double layer metallization structures were characterized using scanning electron microscopy (SEM) and interfacial reactions between the transition metal layer and Al-1Cu were examined using glancing angle x-ray diffraction (GA-XRD). Resistivities of the double layer films were chara